dm nh6021spdq document number: d s 38111 rev. 2 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated d mnh6021spdq advance information advanced information 60v 175c dual n - channel enhancement mode mosfet power d i product summary v (br)dss r ds(on) max i d max t c = + 25c 60v 25m ? @ v gs = 10 v 32a 40m ? @ v gs = 4.5 v 25a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use i n : ? backlighting ? power m anagement f unctions ? dc - dc converte rs features and benefits ? rated to + 175 c C i deal for h igh a mbient t emperature e nvironments ? 1 00% unclamped inductive switching C e nsures m ore r eliable and r obust e nd a pplication ? high conversion efficiency ? low r ds(on) C minimizes on - state losses ? low inpu t capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap c apable (note 4 ) mechanical data ? case: powerdi ? 5060 - 8 (type c) ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 97 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm n h 60 21 s pd q - 13 powerdi5060 - 8 (type c) 2 , 5 00 /tape & reel note s: 1. no purposely added lead. fully eu dire ctive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antim ony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q10 1 qualified and are ppap capable. p lease refer to http://ww w.diodes.com/quality/product_compliance_definitions/. 5 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information pin o ut top view equivalent circuit = manufacturers marking h6021sd = product type marking code yyww = date code marking yy = year (ex: 16 = 20 16 ) ww = week (01 - 53) bottom view top view s 1 d 2 d 1 d 1 d 2 g1 s 2 g 2 pin1 powerdi is a registered trademark of diodes incorporated. d 1 s 1 g 1 d 2 s 2 g 2
dm nh6021spdq document number: d s 38111 rev. 2 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated d mnh6021spdq advance information advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 7 ) v gs = 10 v t a = +25c t a = +70c i d 8.2 6.5 a continuous drain curren t (note 8 ) v gs = 10 v t c = +25c t c = + 10 0c i d 32 22 a pulsed drain curren t ( 38 0 s p ulse, d uty c ycle = 1% ) i dm 80 a maximum continuous body diode f orward current (note 8 ) i s 32 a avalanche current, l = 0.1mh (note 9 ) i as 35 a avalanche energy, l = 0.1m h (note 9 ) e as 64 mj thermal characteristics characteristic sym bol value units total power dissipation (note 6 ) p d 1.5 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 99 c/w t<10s 53 total power dissipation (note 7 ) p d 2.8 w thermal resistance, junction to ambient (note 7 ) s teady s tate r ja 54 c/w t<10s 27 thermal resistance, junction to case (note 8 ) r j c 2.2 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 10 ) drain - source breakdown voltage bv dss 60 gs = 0v, i d = 250a j = +25c i dss ds = 60 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 10 ) gate threshold voltage v gs(th) 1 ds = v gs , i d = 250 a ds(on) ? gs = 10 v, i d = 15 a gs = 4 .5 v, i d = 12 a diode forward voltage v sd gs = 0v, i s = 2.6 a dynamic characteristics (note 1 1 ) input capacitance c iss ds = 25 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 10 v ) q g ds = 30 v , i d = 2 0 a, total gate charge ( v gs = 6 v ) q g gs gd d(on) dd = 30 v, v gs = 10 v, r g = 4.7 ? d = 20 a turn - on rise time t r d(off) f rr ? ? 00a/s rr ? ? notes: 6 . device mounted on fr - 4 pc board, with minimum r ecommended pad layout, single sided. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal bias to bottom layer 1 - inch square copper plate. 8 . thermal re sistance from junction to soldering point (on the exposed drain pad). 9 . i as and e as r ating are based on low frequency and duty cycles to keep t j = 25 c 10 . short duration pulse test used to minimize self - heating effect. 1 1 . guaranteed by design. not subject to product testing.
dm nh6021spdq document number: d s 38111 rev. 2 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated d mnh6021spdq advance information advanced information 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 8v gs v = 10v gs v = 4v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a t = 175c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 5 10 15 20 25 30 5 10 15 20 25 30 35 40 45 50 v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 5 10 15 20 25 30 35 40 2 4 6 8 10 12 14 16 18 20 i = 12a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs t = 175c a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v gs i = 5a d v = 10v gs i = 12a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm nh6021spdq document number: d s 38111 rev. 2 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated d mnh6021spdq advance information advanced information 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v gs i = 12a d v = 10v gs i = 12a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 1 8 15 22 29 36 43 50 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a t = 175c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 55 60 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 v = 30v ds i = 20a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0.1 1 10 100 0.1 1 10 100 r ds(on) limited dc p = 100ms w p = 10ms w p = 1ms w p = 10s w t = 175c j (m ax ) t = 25c c v = 10v gs single pulse dut on infinite heatsink p = 1s w i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm nh6021spdq document number: d s 38111 rev. 2 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated d mnh6021spdq advance information advanced information 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? jc jc r = 2.2c/w ? jc duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm nh6021spdq document number: d s 38111 rev. 2 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated d mnh6021spdq advance information advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 (type c) suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 (type c) powerdi5060 - 8 (type c) dim min max typ a 0.90 1. 10 1.00 a1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 d 5.15 bsc d1 4.85 4.95 4.90 d2 1.40 1.60 1.50 d3 C C e 6.15 bsc e1 5.75 5.85 5.80 e2 3.56 3.76 3.66 e 1.27bsc k C C k1 0.56 C C l 0.51 0.71 0.61 la 0.51 0.71 0.61 l1 0.05 0.20 0.175 l4 C C m 3.50 3.71 3.605 x C C y C C 10 12 11 1 6 8 7 all dimensions in mm dimensions value (in mm) c 1.270 g 0. 660 g1 0.820 x 0.610 x1 3.910 x2 1.650 x3 1.650 x4 4.420 y 1.270 y1 1.020 y2 3.810 y3 6.610 detail a 0(4x) seating plane a1 c e 01(4x) d1 e1 d e 1 y x ?1.000 depth 0.070.030 a detail a l k m l1 d2 la e2 b(8x) e/2 1 b1(8x) b2(2x) d2 k1 d3 l4 1 8 y3 x4 y1 y2 x1 g1 x c y(4x) g x2 x3
dm nh6021spdq document number: d s 38111 rev. 2 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated d mnh6021spdq advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implie d warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorpora ted convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated an d all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales chan nel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of th is document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written app roval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when pr operly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perfor m can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evi ces or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or syst ems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diod es incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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